Thin film transistor substrate for display device and fabricating method thereof
US7064347B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 13, 2004 |
| Grant date | Jun 20, 2006 |
| Priority date | — |
| Expiry date | Oct 13, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/136236
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A thin film transistor substrate for a display device includes a gate line; a gate insulating film disposed over the gate line; a data line disposed on the gate insulating film intersecting with the gate line to define a pixel area; a thin film transistor including a gate electrode connected to the gate line, a source electrode connected to the data line, a drain electrode, and a channel between the source electrode and the drain electrode; a protective film disposed covering the gate line, the data line, and the thin film transistor; a pixel electrode connected to the drain electrode of the thin film transistor; and a storage capacitor having a first upper storage electrode connected to the pixel electrode, and a second upper storage electrode connected to the first upper storage electrode on a side surface basis via a first contact hole passing through the protective film and the first upper storage electrode at an overlapping portion of the gate line and the first upper storage electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.