LED chip with integrated fast switching diode for ESD protection
US7064353B2 · kind B2 · utility
110Cited by
7References
22Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 26, 2004 |
| Grant date | Jun 20, 2006 |
| Priority date | — |
| Expiry date | Aug 26, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/16
Abstract
A relatively small ESD protection diode is formed on the same chip as a light emitting diode. In one embodiment, the ESD diode is a mesa-type diode isolated from the light emitting diode by a trench. To reduce the series resistance of the ESD diode, the PN junction and metal contact to the semiconductor material is made long and expands virtually the width of the chip. Various configurations of the PN junction and the N and P metal contacts for the ESD diode are described for increasing the breakdown voltage and for improved testing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.