Magnetoresistive element, magnetic memory cell, and magnetic memory device
US7064367B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 8, 2004 |
| Grant date | Jun 20, 2006 |
| Priority date | — |
| Expiry date | Dec 14, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1675
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present invention provides a magneto-resistive element capable of stably performing information writing operation by efficiently using a magnetic field generated by current flowing in a conductor and to a magnetic memory device having the same. A magneto-resistive element is constructed so that the area of a cross section orthogonal to the circumferential direction of a pair of magnetic yokes becomes the smallest in connection parts facing stacked bodies. With the configuration, magnetic flux density of return magnetic fields generated by passing write current to write bit lines and write word lines can be made the highest in the connection parts. Thus, information can be written efficiently and stably.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.