JFET controlled schottky barrier diode
US7064407B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 4, 2005 |
| Grant date | Jun 20, 2006 |
| Priority date | — |
| Expiry date | May 28, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/87
Abstract
A JFET controlled Schottky barrier diode includes a p-type diffusion region integrated into the cathode of the Schottky diode to form an integrated JFET where the integrated JFET provides on-off control of the Schottky barrier diode. The p-type diffusion region encloses a portion of the forward current path of the Schottky barrier diode where the p-type diffusion region forms the gate of the JFET and the enclosed portion of the forward current path forms the channel region of the JFET. By applying a reverse biased potential to the gate of the JEFT with respect to the anode of the Schottky diode, the forward current of the Schottky diode can be pinched off, thereby providing on-off control over the Schottky diode forward current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.