Method and structure of diode
US7064418B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 20, 2004 |
| Grant date | Jun 20, 2006 |
| Priority date | — |
| Expiry date | Jun 30, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/548
Abstract
A method and a structure of a diode are provided. The diode is used in an electrostatic discharge protection circuit using TFT (Thin Film Transistor) fabrication technology. A semiconductor layer is formed on a substrate. A first region of a first carrier concentration is formed in the semiconductor layer. A second region of a second carrier concentration is formed in the semiconductor layer. An insulator is formed on the semiconductor layer. The insulator layer is etched to form at least a contact window. The contact window exposes a portion of an upper surface of the semiconductor layer. A metal layer is formed on the insulator layer. The metal layer fills up the contact window to contact the semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.