IDSS RF amplifier
US7064611B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 8, 2004 |
| Grant date | Jun 20, 2006 |
| Priority date | — |
| Expiry date | Jan 20, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2200/372
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A single-power-supply Idss-bias RF amplifier is disclosed, which is composed by the first and second stages Amplifiers. The two stages have the same circuit topology except matching circuits. The source terminal of amplifier is grounded directly to reduce a parasitic effect from a bias circuit. It will increase the stability of the RF amplifier and avoid an oscillation. The lossy matching circuits and eliminating resonator circuit are designed to make the RF amplifier unconditional stable. A variable resister is put into to adjust a D.C. voltage on the drain terminal. The current of amplifier could be controlled in a reasonable range. High gain and quit low noise have been obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.