Electron affinity engineered VCSELs
US7065124B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 29, 2004 |
| Grant date | Jun 20, 2006 |
| Priority date | — |
| Expiry date | May 12, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/166
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A VCSEL having an N-type Bragg mirror with alternating layers of high bandgap (low index) and low bandgap (high index) layers of AlGaAs. The layers may be separated by a step change of Al composition followed by a graded region, and vice versa for the next layer, in the N-type mirror to result in a lower and more linear series resistance. Also, an N-type spacer layer may be adjacent to an active region of quantum wells. There may be a similar step in a change of Al composition from the nearest layer of the N-type mirror to the N-type spacer formed from a lower bandgap direct AlGaAs layer to provide lower free carrier absorption. With electron affinity engineering, a minority carrier hole barrier may be inserted adjacent to the quantum wells to improve hole confinement at high current density and high temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.