Pattern correction method of semiconductor device
US7065739B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 27, 2002 |
| Grant date | Jun 20, 2006 |
| Priority date | — |
| Expiry date | Aug 20, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70441
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A pattern correction method executed by a computer includes a first correction and a second correction. The first correction is executed by calculating a correction value, in consideration for an optical proximity effect, for edges (first edges) meeting a condition among the edges constituting a designed pattern. Subsequently, The second correction is executed for an edge (second edge) which does not meet the condition, by use of the correction value of any one of the edges (first edges) adjacent to the second edge among the first edges for which the first correction is executed, thus connecting the corrected first edge and the corrected second edge by a line segment. The pattern is corrected to a shape suitable for a mask drawing and a check with simple processing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.