Flip-chip light emitting diode and fabricating method thereof
US7067340B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 31, 2005 |
| Grant date | Jun 27, 2006 |
| Priority date | — |
| Expiry date | May 31, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/857
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A flip-chip light emitting diode and fabricating methods are disclosed. A soft transparent adhesive layer is utilized to past a transparent conductive substrate onto a light emitting diode epitaxy structure on a substrate, and the substrate is next removed entirely. Then, a mesa-etching process is performed to form a first top surface and a second top surface on the light emitting diode epitaxy structure for respectively exposing an n-type layer and a p-type layer in the light emitting diode epitaxy structure. Next, a metal reflective layer and a barrier layer are formed on the light emitting diode epitaxy structure in turn, and electrodes are finally fabricated on the barrier layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.