Single electron transistor manufacturing method by electro-migration of metallic nanoclusters
US7067341B2 · kind B2 · utility
20Cited by
7References
35Claims
0Family size
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Key dates
| Filing date | Oct 28, 2003 |
| Grant date | Jun 27, 2006 |
| Priority date | — |
| Expiry date | Feb 19, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/969
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method manufactures a single electron transistor device by electro-migration of nanocluster wherein said nanoclusters are metallically passivated and forced to assembly over a lithographic patterned substrate under control of a non homogeneous electric field at room temperature. A controlled migration and the desired location of the metallic passivated nanoclusters are based on a dielectrophoretic process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.