Gating device and driver for modulation of charged particle beams
US7067803B2 · kind B2 · utility
1Cited by
7References
13Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 9, 2003 |
| Grant date | Jun 27, 2006 |
| Priority date | — |
| Expiry date | Oct 9, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J49/40
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
By connecting the Bradbury-Nielson gate (BNG) directly to a driver without a transmission line, distortion of the voltage waveform experienced a the BNG are much reduced. Because the magnitude of the modulation defects grows as the applied modulation voltage is increased, Bradbury-Nielson gates with finer wire spacing such as 100 microns, and operating at 10 to 15 V, significantly better signal-to-noise ratios are achieved. HT-TOFMS data were also post processed using an exact knowledge of the modulation defects.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.