Semiconductor integrated circuit device
US7067899B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 27, 2004 |
| Grant date | Jun 27, 2006 |
| Priority date | — |
| Expiry date | Sep 27, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/401
Abstract
A semiconductor integrated circuit device according to the invention includes an N-type embedded diffusion region between a substrate and a first epitaxial layer in island regions serving as small signal section. The substrate and the first epitaxial layer are thus partitioned by the N-type embedded diffusion region having supply potential in the island regions serving as small signal section. This structure prevents the inflow of free carriers (electrons) generated from a power NPN transistor due to the back electromotive force of the motor into the small signal section, thus preventing the malfunction of the small signal section.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.