Heat spreader and semiconductor device and package using the same
US7067903B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 6, 2003 |
| Grant date | Jun 27, 2006 |
| Priority date | — |
| Expiry date | Mar 28, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/12044
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and package has a heat spreader directly disposed on the reverse surface of the semiconductor device. This heat spreader includes a diamond layer or a layer containing diamond and ceramics such as silicon carbide and aluminum nitride. The heat spreader is directly formed on a substrate for the semiconductor device. In particular, the heat spreader is composed of a diamond layer and one or two metal or ceramic members, which are bonded to the diamond layer with one or two polymer adhesive layers. This diamond layer has a fiber structure across the thickness or a microcrystalline structure. Cilia are formed on a surface of the diamond layer facing the one or two metal or ceramic members.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.