Semiconductor device having hall-effect and manufacturing method thereof
US7067923B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 2, 2003 |
| Grant date | Jun 27, 2006 |
| Priority date | — |
| Expiry date | Dec 2, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3025
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A first insulation film is made of a silicon material and is provided on a semiconductor base. A second insulation film is made of an organic material and is provided on the first insulation film. The second insulation film is thicker than the first insulation film. A third insulation film is thinner than the second insulation film and is provided on the second insulation film. The third insulation film is made of a silicon material and has a moisture resistance property. A fourth insulation film is made of an organic material. The fourth insulation film is provided on the third insulation film to prevent a damage on the third insulation film. A wiring layer is provided on the fourth insulation film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.