Semiconductor chip and method for manufacturing the same
US7067926B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 9, 2003 |
| Grant date | Jun 27, 2006 |
| Priority date | — |
| Expiry date | Dec 9, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/30105
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor chip having a plurality of device formative layers that are formed into an integrated thin film is provided by a technique for transferring. According to the present invention, a semiconductor chip that is formed into a thin film and that is highly integrated can be manufactured by transferring a device formative layer with a thickness of at most 50 μm which is separated from a substrate into another substrate by a technique for transferring, and transferring another device formative layer with a thickness of at most 50 μm which is separated from another substrate to the above device formative layer, and, repeating such transferring process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.