Silicon crystallization using self-assembled monolayers
US7071022B2 · kind B2 · utility
8Cited by
11References
9Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 18, 2003 |
| Grant date | Jul 4, 2006 |
| Priority date | — |
| Expiry date | Aug 23, 2023 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC03C2218/32
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A display device comprises a substrate having a layer of crystalline or polycrystalline semiconductor material disposed over the substrate, wherein the substrate has a strain point that is lower than a forming temperature of the layer. The crystalline or polycrystalline material is fabricated by a method that includes providing a self-assembled monolayer (SAM) over the substrate, depositing a layer of material over the SAM, and substantially crystallizing the layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.