Method of manufacturing semiconductor device
US7071071B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 16, 2004 |
| Grant date | Jul 4, 2006 |
| Priority date | — |
| Expiry date | Mar 16, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/033
Abstract
A lower electrode of a capacitor element is formed by manufacturing a crown structure while using a first conducting material such as titanium nitride or the like excellent in mechanical strength as a base material and by forming a film of a second conducting material such as ruthenium or the like, which is comparatively difficult to be oxidized, on a surface of the crown structure. First, ruthenium is deposited on a surface of the crown structure by using a sputtering method. Thereafter, the ruthenium (sputtered ruthenium) placed in a peripheral region of the crown structure is removed by etching, and a film of ruthenium is further formed on a surface of the crown structure by using a CVD method while using the sputtered ruthenium as a seed layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.