Method for CMP removal rate compensation
US7071106B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 5, 2003 |
| Grant date | Jul 4, 2006 |
| Priority date | — |
| Expiry date | Aug 23, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3212
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for polishing a material layer on a semiconductor wafer to a desired target layer thickness. The method includes calculating a compensated removal rate based on the thickness of material to be removed from a material layer on the wafer according to a standard value; the current material removal rate of the CMP apparatus; and the offset thickness, which equals the difference between the thickness of the material layer which would be attained using the current material removal rate and the target thickness for the material layer. The calculated compensated removal rate is then programmed into the controller for the CMP apparatus, which polishes the material layer at the calculated compensated removal rate to achieve the desired target layer thickness for the layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.