Patent · US Expired

Gallium nitride material devices including an electrode-defining layer and methods of forming the same

US7071498B2 · kind B2 · utility

133Cited by

72References

72Claims

0Family size

Assignee

Nitronex Corporation · US

Inventors

Jerry W. Johnson · Raleigh, US
Robert Joseph Therrien · Cary, US
Andrei Vescan · Herzogenrath, DE
Jeffrey D. Brown · Charlotte, US

Key dates

Filing date	Dec 17, 2003
Grant date	Jul 4, 2006
Priority date	—
Expiry date	Dec 17, 2023

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/8503
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Gallium nitride material devices and methods of forming the same are provided. The devices include an electrode-defining layer. The electrode-defining layer typically has a via formed therein in which an electrode is formed (at least in part). Thus, the via defines (at least in part) dimensions of the electrode. In some cases, the electrode-defining layer is a passivating layer that is formed on a gallium nitride material region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.