Image sensor having integrated single large scale pixel and pixel separation pattern
US7071501B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 30, 2003 |
| Grant date | Jul 4, 2006 |
| Priority date | — |
| Expiry date | Apr 28, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/80
Abstract
An image sensor is disclosed where individual photo diodes of the respective unit cells separated by an element isolating layer are physically integrated into a single large scale pixel formed widely on a semiconductor substrate so as to hold the pixels in common. A pixel separation pattern is additionally formed on a portion of the large scale photo diode formed so as to electrically separate them. An optimization of the light receiving area of the photo diode, a minimization of the intrusion area of an element isolating layer, and so on are achieved, so that the photo diode recovers an area occupied by an intrusion of the element isolating layer, thus maximizing the light receiving area in an optimal scale and easily preventing electrical impacts between the respective unit cells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.