Non-volatile semiconductor memory device
US7071512B2 · kind B2 · utility
6Cited by
3References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 3, 2005 |
| Grant date | Jul 4, 2006 |
| Priority date | — |
| Expiry date | Mar 3, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6893
Abstract
A non-volatile semiconductor memory device includes a substrate, a first insulating film formed on the substrate, a second insulating film formed on the first insulating film, a plurality of granular dots formed in the second insulating film adjacent to the first insulating film as a floating gate, and a control gate formed on the second insulating film. The second insulating film is a high dielectric constant film made of oxide whose dielectric constant is higher than that of the first insulating film and whose heat of formation is higher than that of silicon oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.