Semiconductor device having a Damascene gate or a replacing gate
US7071529B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 9, 2004 |
| Grant date | Jul 4, 2006 |
| Priority date | — |
| Expiry date | Jun 9, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
Abstract
A semiconductor device includes semiconductor elements and at least one dummy pattern. Each or at least some of the semiconductor elements has a Damascene gate structure or a replacing gate structure and is located in element-forming regions. In addition, at least a dummy pattern is located in a region different from the element-forming regions. The dummy pattern may have a semiconductor element structure of the same or different kind from the Damascene gate structure or replacing gate structure. The dummy pattern may be a pattern of an insulating film, an interface transistor, or an analog circuit capacitor electrode instead of the dummy gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.