Light emitting device methods

US7074631B2 · kind B2 · utility

Assignee

• Luminus Devices, Inc. · US

Inventors

• Alexei A. Erchak · Cambridge, US
• John W. Graff · Watertown, US
• Michael Gregory Brown · Berkeley Heights, US
• Scott W. Duncan · Bloomington, US
• Milan Singh Minsky · Newton, US

Key dates

• Filing date: Mar 5, 2004
• Grant date: Jul 11, 2006
• Expiry date: Apr 1, 2024

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/956

Abstract

A method includes disposing a planarization layer on a surface of a layer of semiconductor material and disposing a lithography layer on a surface of the planarization layer. The method also includes performing nanolithography to remove at least a portion of the planarization layer, at least a portion of the lithography layer and at least a portion of the layer of semiconductor material, thereby forming a dielectric function in the surface of the layer of semiconductor material that varies spatially according to a pattern.