Method of making barrier layers
US7074640B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 20, 2003 |
| Grant date | Jul 11, 2006 |
| Priority date | — |
| Expiry date | Jul 1, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K2102/311
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention involves a low-temperature, photoresist-free method of fabricating a barrier layer on a flexible substrate. An embodiment involves the conversion of a precursor into a top-surface imaging layer during a direct patterning step. Preferred precursors are formed from a metal complex comprising at least one ligand selected from the group consisting of acac, carboxylato, alkoxy, azide, carbonyl, nitrato, amine, halide, nitro, and mixtures thereof and at least one metal selected from the group consisting of Li, Al, Si, Ti, V, Cr, Mn, Fe, Ni, Co, Cu, Zn, Sr, Y, Zr, Nb, Mo, Ru, Rh, Pd, Ag, In, Sn, Ba, La, Pr, Sm, Eu, Hf, Ta, W, Re, Os, Ir, Pt, Au, Pb, Th, U, Sb, As, Ce, Mg, and mixtures thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.