Photoelectric conversion device
US7075052B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 17, 2003 |
| Grant date | Jul 11, 2006 |
| Priority date | — |
| Expiry date | Aug 4, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/548
Abstract
A photoelectric conversion device capable of improving an open-circuit voltage is obtained. In this photoelectric conversion device, many of crystal grains contained in a third non-single-crystalline semiconductor layer have major axes substantially perpendicular to a main surface of a substrate on an interfacial portion between at least either a first non-single-crystalline semiconductor layer or a second non-single-crystalline semiconductor layer and the third non-single-crystalline semiconductor layer, and many of crystal grains contained in either semiconductor layer have major axes substantially parallel to the main surface of the substrate on the aforementioned interfacial portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.