Semiconductor device and method for fabricating the same

US7075113B2 · kind B2 · utility

Assignee

• ATOMIC ENERGY COUNCIL—INSTITUTE OF NUCLEAR ENERGY RESEARCH · TW

Inventor

• Chih-Hung Wu · Taoyuan, TW

Key dates

• Filing date: Nov 7, 2003
• Grant date: Jul 11, 2006
• Expiry date: Feb 10, 2024

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/824

Abstract

A light-emitting device and method for fabricating the same are revealed. The light-emitting device includes an epitaxial structure, a P-type ohmic contact electrode and an N-type ohmic contact electrode. The epitaxial structure includes a plurality of epitaxial layers capable of emitting light and P-type contact layer. The P-type ohmic contact electrode includes a first nickel layer deposited on the epitaxial structure, a first platinum layer deposited on the first nickel layer, and a first gold layer deposited on the first platinum layer. According to the fabricating method of the light-emitting device, an epitaxial structure is first formed on the surface of a substrate, a P-type ohmic contact electrode is then formed on the epitaxial structure, and an N-type ohmic contact electrode is formed on the other surface of the substrate. Finally, an annealing process is performed at a temperature between 220° C. and 330° C.