Radiation-sensitive semiconductor body having an integrated filter layer

US7075124B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Tony Albrecht · Bad Abbach, DE
• Peter Brick · Regensburg, DE
• Glenn-Yves Plaine · Regensburg, DE
• Marc Philippens · Regensburg, DE

Key dates

• Filing date: Jul 30, 2004
• Grant date: Jul 11, 2006
• Expiry date: Jul 30, 2024

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/52

Abstract

A radiation-sensitive semiconductor body which has at least one radiation-absorbent active area (2) between at least two contact layers (6, 7) and which receives electromagnetic radiation in a wavelength range between λ1 and λ2 where λ2>λ1. A filter layer (5) is arranged between the active area (2) and a radiation input surface (9). The active area (2) detects electromagnetic radiation at a wavelength below λ2. The filter layer (5) absorbs electromagnetic radiation at a wavelength below λ1, and passes electromagnetic radiation at a wavelength above λ1.