Image sensor with reduced p-well conductivity
US7075129B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 9, 2004 |
| Grant date | Jul 11, 2006 |
| Priority date | — |
| Expiry date | Aug 1, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/153
Abstract
An image sensor includes a substrate of the first conductivity type; a channel of the first conductivity type that spans at least a portion of the substrate; a well of the second conductivity type that is positioned between the channel and substrate for a predetermined portion and that is not between the substrate and the channel for a predetermined portion all of which well is substantially continuous; and a connection to the well; wherein a resistance of the well not between the substrate and the channel is substantially equal to or greater than twenty five percent of a total resistance of the well between the channel and the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.