Semiconductor device having a stress layer for applying tensile of compressive stress to the ferroelectric film
US7075135B2 · kind B2 · utility
3Cited by
2References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 20, 2003 |
| Grant date | Jul 11, 2006 |
| Priority date | — |
| Expiry date | Dec 4, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/351
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device comprises a substrate, a ferroelectric capacitor which includes a ferroelectric film on the substrate, and a stress application layer which applies tensile or compressive stress to the ferroelectric film of the ferroelectric capacitor by applying stress to the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.