Method and device for testing semiconductor laser
US7075324B2 · kind B2 · utility
0Cited by
4References
2Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 13, 2004 |
| Grant date | Jul 11, 2006 |
| Priority date | — |
| Expiry date | Sep 4, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/124
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In testing a distributed feedback semiconductor laser with a grating having a phase shift part, a spectrum of the distributed feedback semiconductor laser is measured. A difference between an intensity of a side mode at a high-frequency-wave side of a main mode and an intensity of a side mode at a low-frequency-wave side of the main mode is calculated. The distributed feedback semiconductor laser is judged non-defective when the difference is more than a certain value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.