Drive circuit for semiconductor device
US7075355B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 13, 2004 |
| Grant date | Jul 11, 2006 |
| Priority date | — |
| Expiry date | Aug 1, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K17/166
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A drive circuit for driving an insulated gate transistor, the drive circuit including a driver that applies a gate voltage to the transistor, and a timing controller that controls a timing of the driver. The driver includes first and second drive circuits, the first and second drive circuits are electrically connected to the timing controller through first and second electrical connections, respectively, the first and second electrical connections control the first and second drive circuits, respectively, and the driver is capable of applying the gate voltage as a first gate voltage through the first drive circuit to the transistor, and as a second gate voltage through the second drive circuit to the transistor. The first gate voltage is lower than a threshold voltage of the transistor, the second gate voltage is a specified voltage for driving the transistor, and the timing controller controls the driver so that an application of the first gate voltage precedes an application of the second gate voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.