Fine-dimension masks and related processes
US7077974B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 30, 2003 |
| Grant date | Jul 18, 2006 |
| Priority date | — |
| Expiry date | Jun 8, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24322
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of making, and the resultant mask, comprises developing resist layers over surfaces of a masking layer to transfer significantly reduced sized openings within glass masters attached to the surfaces of the masking layer into the resist layers. These significantly reduced sized openings within the resist layers are then transferred into the masking layer within a first etch bath by simultaneously monitoring and controlling both etchant activity and concentration of a byproduct within the etch bath formed between the masking material and the etchant. The openings may be etched to completion within the first etch bath, or alternatively, the openings may be etched to a pre-finished image size. Wherein the openings are etched to a pre-finished image size, the masking layer is immersed into a second etch bath for further micro-etching of these openings to a final desired image size.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.