Method for fabricating a semiconductor device having a heat radiation layer including forming scribe lines and dicing
US7078265B2 · kind B2 · utility
5Cited by
4References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 21, 2003 |
| Grant date | Jul 18, 2006 |
| Priority date | — |
| Expiry date | Nov 21, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/117
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A fabricating method for a semiconductor device includes forming a heat spreading material on rear surface of the semiconductor wafer. The semiconductor wafer has a plurality of device areas and scribe lines which are arranged between the device areas. After the heat spreading material is formed on rear surface of the semiconductor wafer, the semiconductor wafer is separated at the scribe lines.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.