Semiconductor device and method for manufacturing the same
US7078277B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 23, 2004 |
| Grant date | Jul 18, 2006 |
| Priority date | — |
| Expiry date | Nov 23, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/674
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
It is a problem to realize, by a reduced number of processes than that of the conventional, a reliable active-matrix liquid crystal display device having a high opening ratio for high-definition display. The present invention is characterized by: forming a gate electrode and source and drain interconnections in the same process, forming a first insulating film covering the interconnections, forming an upper light-shielding film on the first insulating film, forming a second insulating film on the upper light-shielding film, partially etching the first and second insulating films to form a contact hole reaching the drain interconnection, and forming a pixel electrode on the second insulating film to connect to the drain interconnection. Meanwhile, a holding capacitance is formed by the upper light-shielding film, the second insulating film and the pixel electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.