Method of manufacturing semiconductor device having oxide films with different thickness
US7078354B2 · kind B2 · utility
5Cited by
3References
17Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 12, 2004 |
| Grant date | Jul 18, 2006 |
| Priority date | — |
| Expiry date | May 12, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0144
Abstract
After a first gate oxide film (302) is formed on a substrate (301), a nitride layer (303) is formed by a first oxynitriding process. The first gate oxide film is selectively removed from a thinner film part area of the substrate. A second gate oxide film forming process forms a second gate oxide film (305A) in the thinner film part area and a third gate oxide film (305B) in a thicker film part area. By executing second oxynitriding process, nitride layers (306A and 306B) are formed at the thinner and the thicker part areas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.