Light-emitting device
US7078737B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 29, 2003 |
| Grant date | Jul 18, 2006 |
| Priority date | — |
| Expiry date | Aug 29, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3025
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An InGaN-based light-emitting diode that emits light in blue, for example, is mounted on a support substrate as a semiconductor light-emitting element, and a transparent film is fixed to the support substrate so as to cover the semiconductor light-emitting element. An electrode pattern is formed on an upper surface of the transparent film, and the electrode pattern is electrically connected to terminal electrodes of the semiconductor light-emitting element through, for example, through-holes. The transparent film can contain a phosphor excited by light emitted from the semiconductor light-emitting element. It is not necessary to perform wire bonding for connecting the semiconductor light-emitting element to the electrode pattern and sealing with a sealant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.