MEMS device and method of forming MEMS device
US7079301B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 28, 2005 |
| Grant date | Jul 18, 2006 |
| Priority date | — |
| Expiry date | Mar 28, 2025 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81B2201/042
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method of forming a MEMS device includes providing a substructure including a base material and at least one conductive layer formed on a side of the base material, forming a dielectric layer over the at least one conductive layer of the substructure, defining an actuating area for the MEMS device on the dielectric layer, including depositing a conductive material on the dielectric layer and communicating the conductive material with the at least one conductive layer of the substructure through the dielectric layer, forming a sacrificial layer over the conductive material and the dielectric layer, including depositing silicon over the conductive material and the dielectric layer, and forming a substantially planar surface of the silicon, forming an actuating element over the sacrificial layer within the actuating area, including communicating the actuating element with the conductive material of the actuating area through the sacrificial layer, and substantially removing the sacrificial layer between the actuating element and the dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.