Optically addressed extreme ultraviolet modulator and lithography system incorporating modulator
US7079306B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 19, 2004 |
| Grant date | Jul 18, 2006 |
| Priority date | — |
| Expiry date | Aug 19, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70291
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An optically addressed extreme ultraviolet (EUV) modulator in which a spatial amplitude or phase pattern is provided to an EUV beam that is reflected from, or transmitted through the modulator. The modulator includes a modulator structure that includes a material with a high coefficient of thermal expansion. When a thermal impulse is incident on one part of the modulator, the resulting expansion changes the reflected phase or amplitude of the EUV beam from that part. A thermal pattern is imprinted on the modulator by absorption of a visible or ultraviolet pattern, resulting in a corresponding modulation of the EUV beam. A lithography system is based on the optically addressed EUV modulator.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.