Apparatus for fabricating surface emitting semiconductor laser
US7079562B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 14, 2005 |
| Grant date | Jul 18, 2006 |
| Priority date | — |
| Expiry date | Apr 14, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2086
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of fabricating a surface emitting semiconductor laser includes a first step of forming, on a substrate, multiple monitor-use semiconductor layers having stripes radiating from a center of the substrate, and a laser portion that includes semiconductor layers and is located on the periphery of the multiple monitor-use semiconductor layers, a second step of monitoring oxidized conditions on the multiple monitor-use semiconductor layers when a selectively oxidized region is formed in the laser portion, and a third step of controlling oxidization of the selectively oxidized region on the basis of the oxidized conditions thus monitored.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.