Semiconductor laser device and method of manufacturing the same
US7079563B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 24, 2003 |
| Grant date | Jul 18, 2006 |
| Priority date | — |
| Expiry date | Sep 1, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/4087
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An improved semiconductor laser device is provided which has a small distance between laser light emitting spots. Such laser device comprises i) a first light emitting element including a laser oscillation section provided with a ridge waveguide and formed by forming a group-III nitride semiconductor film on a substrate, an insulating layer and an ohmic electrode layer, ii) a second light emitting element including a laser oscillation section provided with a waveguide and formed by forming III–V compound semiconductor film, an insulating layer and an ohmic electrode layer. By virtue of the adhesive metal layer interposed between the two ohmic electrode layers, the two laser oscillation sections are combined together, thereby forming the improved semiconductor laser device which has a small distance between laser light emitting spots of the two laser oscillation sections.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.