Non-volatile semiconductor memory device having sense amplifier with increased speed
US7082058B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 16, 2004 |
| Grant date | Jul 25, 2006 |
| Priority date | — |
| Expiry date | Nov 16, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/28
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In the non-volatile semiconductor memory device having a sense amplifier for sensing data stored in a selected memory cell by comparing cell current differences from a reference cell, a current sink unit coupled in parallel with a reference line and a data line are provided. The reference line connects between the reference cell and the sense amplifier, and the data line connects between the selected memory cell and the sense amplifier, where the current sink unit together increases currents of the reference line and the data line. Also, the device includes a sink current control unit having a configuration of a current mirror with the current sink unit, the sink current control unit consisting of a switching unit and being for controlling a sink current of the current sink unit. The device improves data sensing speed and controls sensing current in conformity with the characteristics of a memory cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.