Method for forming silicon dioxide film using siloxane
US7084076B2 · kind B2 · utility
150Cited by
10References
55Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 19, 2004 |
| Grant date | Aug 1, 2006 |
| Priority date | — |
| Expiry date | Jul 31, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is provided for forming a silicon dioxide film using atomic layer deposition (ALD), wherein a halogen- or NCO-substituted siloxane is used as a Si source. The method includes feeding a substituted siloxane as a first reactant onto a substrate to form a chemisorbed layer of the first reactant, and thereafter feeding a compound consisting of oxygen and hydrogen as a second reactant onto the chemisorbed layer to form the desired silicon dioxide film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.