Organometallic precursor for forming metal film or pattern and method of forming metal film or pattern using the same
US7084288B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 2, 2003 |
| Grant date | Aug 1, 2006 |
| Priority date | — |
| Expiry date | Mar 12, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K3/105
- WIPO fieldOrganic fine chemistry
- WIPO sectorChemistry
Abstract
The object of this invention is to provide an organometallic precursor for forming a metal film or pattern and a method of forming the metal film or pattern using the same. More particularly, the present invention provides an organometallic precursor containing a hydrazine-based compound coordinated with a central metal thereof, and a method of forming a metal film or pattern using the same. Further, the present invention provides a composition containing an organometallic compound and a hydrazine-based compound, and a method of forming a metal film or pattern using the same. Additionally, the present invention is advantageous in that a pure metal film or pattern is formed using the organometallic precursor or composition through a simple procedure without limiting atmospheric conditions at a low temperature, and the film or pattern thus formed has excellent conductivity and morphology. Therefore, the film is useful in an electronic device field including flexible displays and large-sized TFT-LCD.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.