Nitride semiconductor light emitting diode
US7084432B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 14, 2003 |
| Grant date | Aug 1, 2006 |
| Priority date | — |
| Expiry date | Jun 22, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
Abstract
An increased proportion of light projected from a nitride semiconductor light emitting diode enters the area within a specified angle.The nitride semiconductor light emitting diode is provided with an active layer 32 consisting of a nitride semiconductor, and a light projecting face 21. A reflecting mirror 38 is formed only on a side of the active layer 32 opposite the light projecting face 21. The reflecting mirror 38 is formed at a location from the center of the active layer 32 approximately (k·λ/2+λ/4)/n (where λ is the wavelength of light projected from the active layer 32, n is the mean refractive index of an area between the active layer 32 and the reflecting mirror 38, and k is an integer). This light emitting diode allows directivity to be increased sufficiently, and the coupling efficiency thereof with optical fiber consisting of POF or the like can be improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.