Solid-state imaging device and manufacturing method therefor
US7084472B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 31, 2004 |
| Grant date | Aug 1, 2006 |
| Priority date | — |
| Expiry date | Mar 31, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B3/0018
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A solid-state imaging device includes a plurality of two-dimensionally arranged photo diodes and a plurality of microlenses having substantially hemispherical shapes which cover the respective photo diodes. The microlens has a multilayer structure including at least a transparent resin upper layer which forms at least a portion of the substantially hemispherical shape, and a colored lower layer provided on a portion of the transparent resin upper layer which is located above the photo diode, with an interface between the colored lower layer and the transparent resin upper layer having a shape conforming to a surface of the photo diode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.