Capacitor of a semiconductor device and memory device using the same
US7084482B2 · kind B2 · utility
3Cited by
5References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 13, 2004 |
| Grant date | Aug 1, 2006 |
| Priority date | — |
| Expiry date | Aug 13, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A capacitor of a semiconductor device includes a lower electrode, a dielectric layer, including a plurality of band gaps, formed on the lower electrode, and an upper electrode formed on the dielectric layer. A band gap of the plurality of band gaps in the dielectric layer that is not adjacent to either the lower electrode or the upper electrode is smaller than a band gap of the plurality of band gaps in the dielectric layer adjacent to the lower electrode and a band gap of the plurality of band gaps in the dielectric layer adjacent to the upper electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.