Method for preparing low dielectric films
US7087271B2 · kind B2 · utility
28Cited by
7References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 28, 2002 |
| Grant date | Aug 8, 2006 |
| Priority date | — |
| Expiry date | Jan 30, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A low dielectric constant hydrogenated silicon-oxycarbide (SiCO:H) film is prepared by bringing an organosilicon or organosilicate compound having at least one vinyl or ethynyl group, or a mixture of a saturated organosilicon or organosilicate compound and an unsaturated hydrocarbon into contact with a substrate in the presence of an O2-containing gas plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.