Low-expansion unit, method of manufacturing the same and semiconductor provided with the same
US7087316B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 3, 2003 |
| Grant date | Aug 8, 2006 |
| Priority date | — |
| Expiry date | Apr 27, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12958
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A low-expansion unit includes a plate member and an iron-nickel layer. Upper and lower surface layers of the plate member each have the iron-nickel layer thereon and/or therein. While the plate member has a relatively large thermal expansion coefficient, the iron-nickel layers, which are formed on and/or in the upper and lower surface layers of the plate member, have a relatively small thermal expansion coefficient. Therefore, thermal expansion coefficient of the low-expansion unit is as a whole restrained to a relatively small value. Also, the plate member includes pure iron whose thermal conductivity is relatively high. Meanwhile, the iron-nickel layers, which are formed on the plate member, are relatively thin. Therefore, the low-expansion unit has a relatively large thermal conductivity in a direction of thickness thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.