Magnetoresistive spin-valve sensor and magnetic storage apparatus
US7087324B2 · kind B2 · utility
2Cited by
3References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 16, 2003 |
| Grant date | Aug 8, 2006 |
| Priority date | — |
| Expiry date | Sep 16, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/1193
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A magnetoresistive spin-valve sensor is constructed to include a magnetic layer, a specular layer made of a metal oxide, a back layer made of Au, Cu, AuCu, AgCu, AuAgCu or an alloy thereof and interposed between the magnetic layer and the specular layer, and a metal layer disposed adjacent to the specular layer, opposite to the back layer, and made of a metal which improves GMR performance of the magnetoresistive spin-valve sensor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.