Resist stripping composition and method of producing semiconductor device using the same
US7087563B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 4, 2002 |
| Grant date | Aug 8, 2006 |
| Priority date | — |
| Expiry date | Jun 13, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02052
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A resist stripping composition capable of reliably stripping off resist residue or polymer residue and keeping damage to the interconnects to a minimum and a method of producing a semiconductor device using the same, where the resist stripping composition comprises a salt of hydrofluoric acid and a base not including a metal, an organic solvent, a sugar alcohol such as xylitol, and water and has a hydrogen ion concentration of at least 8. The method of production of a semiconductor device comprises dry etching a metal layer or a semiconductor layer on a semiconductor substrate to form an interconnect layer having a predetermined pattern or forming an insulation layer on a semiconductor substrate formed with an interconnect layer and dry etching this to a predetermined pattern, then performing chemical treatment using a resist stripping composition comprising a salt of hydrofluoric acid and a base not including a metal, an organic solvent, a sugar alcohol such as xylitol, and water and having a hydrogen ion concentration of at least 8.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.